Split-Gate CSTBT™ for Suppression of Negative Gate Capacitance Under Short Circuit

CSTBT™ can reduce on-state voltage drop (\mathrm{V}_{\text{CEsat}}) by storing carriers. On the other hand, storing carriers causes flow of displacement current (\mathrm{I}_{\text{dis}}) into the gate, resulting in the overshoot of the gate-emitter voltage (V GE ). The phenomenon of IGBTs is express...

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Bibliographic Details
Main Authors: Sakaguchi, Kosuke, Konishi, Kazuya, Kobayashi, Ryosuke, Nishida, Kazuki, Soneda, Shinya
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
CSTBT
Displacement current
IGBT
Insulated gate bipolar transistors
Logic gates
Negative gate capacitance
Performance evaluation
Power semiconductor devices
SCSOA
Semiconductor device measurement
Split gate flash memory cells
Split-gate
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Description
Summary:CSTBT™ can reduce on-state voltage drop (\mathrm{V}_{\text{CEsat}}) by storing carriers. On the other hand, storing carriers causes flow of displacement current (\mathrm{I}_{\text{dis}}) into the gate, resulting in the overshoot of the gate-emitter voltage (V GE ). The phenomenon of IGBTs is expressed as a negative gate capacitance. In this study, we have found a solution to suppress the negative gate capacitance for \text{CSTBT}^{\text{TM}} , enabling the reduction in \mathrm{V}_{\text{CEsat}} by using a split-gate structure. Additionally, we have clarified the mechanism through a combination of measurements and device simulations. As a result, the split-gate achieved 76% reduction in integral of \mathrm{I}_{\text{dis}} at the same \mathrm{V}_{\text{CEsat}} compared to the conventional structure. This is because most of the \mathrm{I}_{\text{dis}} flowing to lower split gate is directed towards the emitter.
ISSN:1946-0201
DOI:10.1109/ISPSD59661.2024.10579627