Highly-Compact 20-mW, 270-320-GHz InGaAs mHEMT Power Amplifier MMIC

This paper describes a highly compact topology for InGaAs mHEMT based THz PA MMICs. In this context, a unique vertical DC bias distribution between the parallel common-source devices has been developed, allowing the separation of the matching-network design and bias-insertion-network design during t...

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Bibliographic Details
Main Authors: John, Laurenz, Tessmann, Axel, Wagner, Sandrine, Leuther, Arnulf
Format: Conference Proceeding
Language:English
Subjects:
Gain
Indium gallium arsenide
InGaAs
mHEMTs
Microwave amplifiers
Microwave circuits
Power amplifiers
THz
Topology
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Description
Summary:This paper describes a highly compact topology for InGaAs mHEMT based THz PA MMICs. In this context, a unique vertical DC bias distribution between the parallel common-source devices has been developed, allowing the separation of the matching-network design and bias-insertion-network design during the circuit development. As a proof of concept, a 6-stage power amplifier MMIC is reported, realized in a 35-nm InGaAs mHEMT technology. The PA MMIC achieves 20 dB of gain between 270 and 320 GHz and power levels larger than 20mW in the frequency range around 300GHz with an maximum PAE above 2.5 %.
ISSN:2576-7216
DOI:10.1109/IMS40175.2024.10600274