Compact KiKa-Band Frontend PA and LNA in 16nm FinFET for Next Generation Digitally Intensive Arrays

This paper presents a two-stage power amplifier (PA) and a one stage low noise amplifier (LNA), both implemented in a 16nm FinFET process. The PA consists of a common-source (CS) driver stage and doubly neutralized cascode power stage. With a 5G NR FR2 100 MHz 64-QAM modulated signal, this PA achiev...

Full description

Saved in:
Bibliographic Details
Main Authors: Liu, Edward, Lin, Boce, Lu, Cho-Ying, Wang, Hua
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
communications
FinFET
FinFETs
FR2
low noise amplifiers
mm-wave
Power amplifiers
Prototypes
Radio frequency
Transceivers
Vectors
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:This paper presents a two-stage power amplifier (PA) and a one stage low noise amplifier (LNA), both implemented in a 16nm FinFET process. The PA consists of a common-source (CS) driver stage and doubly neutralized cascode power stage. With a 5G NR FR2 100 MHz 64-QAM modulated signal, this PA achieves an average output power of 10.7 dBm and an average power added-efficiency (PAE) of 13.7% at 24 GHz. The rms error vector magnitude (EVMrms) is −25.1 dB. The LNA utilizes a cas coded inductive source degenerated common source topology. It achieves S11
ISSN:2576-7216
DOI:10.1109/IMS40175.2024.10600301