Compact KiKa-Band Frontend PA and LNA in 16nm FinFET for Next Generation Digitally Intensive Arrays

This paper presents a two-stage power amplifier (PA) and a one stage low noise amplifier (LNA), both implemented in a 16nm FinFET process. The PA consists of a common-source (CS) driver stage and doubly neutralized cascode power stage. With a 5G NR FR2 100 MHz 64-QAM modulated signal, this PA achiev...

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Main Authors: Liu, Edward, Lin, Boce, Lu, Cho-Ying, Wang, Hua
Format: Conference Proceeding
Language:English
Subjects:
Bandwidth
communications
FinFET
FinFETs
FR2
low noise amplifiers
mm-wave
Power amplifiers
Prototypes
Radio frequency
Transceivers
Vectors
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Lin, Boce
Lu, Cho-Ying
Wang, Hua
description This paper presents a two-stage power amplifier (PA) and a one stage low noise amplifier (LNA), both implemented in a 16nm FinFET process. The PA consists of a common-source (CS) driver stage and doubly neutralized cascode power stage. With a 5G NR FR2 100 MHz 64-QAM modulated signal, this PA achieves an average output power of 10.7 dBm and an average power added-efficiency (PAE) of 13.7% at 24 GHz. The rms error vector magnitude (EVMrms) is −25.1 dB. The LNA utilizes a cas coded inductive source degenerated common source topology. It achieves S11
doi_str_mv 10.1109/IMS40175.2024.10600301
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With two tones at 26.95 GHz and 27.05 GHz, the measured IIP3 is 0.87 dBm.</description><identifier>EISSN: 2576-7216</identifier><identifier>EISBN: 9798350375046</identifier><identifier>DOI: 10.1109/IMS40175.2024.10600301</identifier><language>eng</language><publisher>IEEE</publisher><subject>Bandwidth ; communications ; FinFET ; FinFETs ; FR2 ; low noise amplifiers ; mm-wave ; Power amplifiers ; Prototypes ; Radio frequency ; Transceivers ; Vectors</subject><ispartof>2024 IEEE/MTT-S International Microwave Symposium - IMS 2024, 2024, p.858-861</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10600301$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,780,784,789,790,27925,54555,54932</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10600301$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Liu, Edward</creatorcontrib><creatorcontrib>Lin, Boce</creatorcontrib><creatorcontrib>Lu, Cho-Ying</creatorcontrib><creatorcontrib>Wang, Hua</creatorcontrib><title>Compact KiKa-Band Frontend PA and LNA in 16nm FinFET for Next Generation Digitally Intensive Arrays</title><title>2024 IEEE/MTT-S International Microwave Symposium - IMS 2024</title><addtitle>IMS</addtitle><description>This paper presents a two-stage power amplifier (PA) and a one stage low noise amplifier (LNA), both implemented in a 16nm FinFET process. 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source IEEE Xplore All Conference Series
subjects Bandwidth
communications
FinFET
FinFETs
FR2
low noise amplifiers
mm-wave
Power amplifiers
Prototypes
Radio frequency
Transceivers
Vectors
title Compact KiKa-Band Frontend PA and LNA in 16nm FinFET for Next Generation Digitally Intensive Arrays
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