Electrophysical Properties of Cd₀.₉₆Mn₀.₀₄Te₀.₉₆Se₀.₀₄ Surface-Barrier Diodes

• Published in: IEEE transactions on nuclear science 2024-09, Vol.71 (9), p.2189-2193
• Main Authors: Sklyarchuk, V., Kopach, O., Fochuk, P., Bolotnikov, A. E., James, R. B.
• Format: Article
• Language: English
• Subjects: Absorption spectra; Carrier recombination; Cd₀.₉₆Mn₀.₀₄Te₀.₉₆Se₀.; Conductivity; Contact resistance; Crystals; Current measurement; Current voltage characteristics; Electric contacts; Electrical resistivity; generation-recombination currents; ohmic contact; rectifying contact; Resistance; Semiconductor device measurement; Single crystals; Surface treatment; Temperature dependence; Temperature measurement; Vacuum deposition
• ISSN: 0018-9499; 1558-1578
• DOI: 10.1109/TNS.2024.3436525

Diode structures, obtained by vacuum deposition of Al onto the surface of a p-Cd0.96Mn0.04Te0.96Se0.04 single crystals, have been manufactured and studied. Applying the Sah-Noyce-Shockley carrier generation-recombination model, a quantitative description of the electrical characteristics of diodes has been achieved. The resistivity of p-Cd0.96Mn0.04Te0.96Se0.04 crystals was equal to \rho ~\approx ~400~\Omega \cdot \text {cm} and was determined from the I-V characteristics of the structure with two ohmic contacts, which were obtained by chemical deposition of gold. The activation energy of the dark temperature dependence of resistivity \rho =\rho (T) was equal to \Delta E \approx 0.24 eV. The forbidden gap of p-Cd0.96Mn0.04Te0.96Se0.04 crystals, found from the optical absorption spectra, was equal to E_{g} =1.495 eV.