Site-controlled Ga(Al)As nanostructure arrays emitting at 740 nm

We presents the results of experimental studies of the formation processes and optical properties of ordered arrays of Ga(Al)As nanostructures on \mathrm{GaAs}(\mathbf{0 0 1}) substrates with regular arrays of pyramidal-shaped holes. The possibility AIGaAs solid solution on a structured surface deco...

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Bibliographic Details
Main Authors: Chernenko, N.E., Makhov, I.S., Melnichenko, I.A., Balakirev, S.V., Kirichenko, D.V., Shandyba, N.A., Kryzhanovskaya, N.V., Solodovnik, M.S.
Format: Conference Proceeding
Language:English
Subjects:
Ga(Al) As
Laser beams
molecular beam epitaxy
nanopatterning
Nanostructures
pyramidal-shaped hole
regular arrays
Stimulated emission
Surface emitting lasers
Surface morphology
Surface treatment
Surface waves
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Summary:We presents the results of experimental studies of the formation processes and optical properties of ordered arrays of Ga(Al)As nanostructures on \mathrm{GaAs}(\mathbf{0 0 1}) substrates with regular arrays of pyramidal-shaped holes. The possibility AIGaAs solid solution on a structured surface decomposes with the formation of low-dimensional structures enriched by the Ga component is demonstrated. We have also shown that the emission wavelength (740 \mathbf{n m}) of site-controlled Ga(Al) As nanostructures is practically independent of the patterned surface morphology, while the emission intensity is determined by the effective volume of nanostructures.
ISSN:2642-5580
DOI:10.1109/ICLO59702.2024.10624032