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Void-free uniform gap filling between thick PECVD silicon nitride waveguides

In this paper, we demonstrate novel fabrication technology for silicon nitride photonics aimed at solving the problem of defects (void) in the region of closely located waveguides. The proposed technology allows to achieve full filling gaps between 1um-high silicon nitride waveguides located at dist...

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Bibliographic Details
Main Authors: Mumlyakov, A.M., Dmitriev, N.Yu, Shibalov, M.V., Trofimov, I.V., Filippov, I.A., Anikanov, A.A., Bilenko, I.A., Tarkhov, M.A.
Format: Conference Proceeding
Language:English
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Summary:In this paper, we demonstrate novel fabrication technology for silicon nitride photonics aimed at solving the problem of defects (void) in the region of closely located waveguides. The proposed technology allows to achieve full filling gaps between 1um-high silicon nitride waveguides located at distance from 200 nm. Fabricated using this technology structures containing high-Q ring microresonators features significantly less coupling rate dispersion at 1510-1620 nm wavelength range, which, in turn, considerably improve the repeatability and yield of fabrication process.
ISSN:2642-5580
DOI:10.1109/ICLO59702.2024.10624194