Void-free uniform gap filling between thick PECVD silicon nitride waveguides

In this paper, we demonstrate novel fabrication technology for silicon nitride photonics aimed at solving the problem of defects (void) in the region of closely located waveguides. The proposed technology allows to achieve full filling gaps between 1um-high silicon nitride waveguides located at dist...

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Main Authors: Mumlyakov, A.M., Dmitriev, N.Yu, Shibalov, M.V., Trofimov, I.V., Filippov, I.A., Anikanov, A.A., Bilenko, I.A., Tarkhov, M.A.
Format: Conference Proceeding
Language:English
Subjects:
Filling
integrated optics
Optical device fabrication
Ring lasers
Silicon
Silicon nitride
Structural rings
void-filling
Waveguide lasers
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creator Mumlyakov, A.M.
Dmitriev, N.Yu
Shibalov, M.V.
Trofimov, I.V.
Filippov, I.A.
Anikanov, A.A.
Bilenko, I.A.
Tarkhov, M.A.
description In this paper, we demonstrate novel fabrication technology for silicon nitride photonics aimed at solving the problem of defects (void) in the region of closely located waveguides. The proposed technology allows to achieve full filling gaps between 1um-high silicon nitride waveguides located at distance from 200 nm. Fabricated using this technology structures containing high-Q ring microresonators features significantly less coupling rate dispersion at 1510-1620 nm wavelength range, which, in turn, considerably improve the repeatability and yield of fabrication process.
doi_str_mv 10.1109/ICLO59702.2024.10624194
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fullrecord <record><control><sourceid>ieee_CHZPO</sourceid><recordid>TN_cdi_ieee_primary_10624194</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>10624194</ieee_id><sourcerecordid>10624194</sourcerecordid><originalsourceid>FETCH-ieee_primary_106241943</originalsourceid><addsrcrecordid>eNqFjsFqwkAUANeCoNT8geD7gaRvN7uJe46WFoR6kFwl6kt8GjeyG5X-fT20555mYC4jxExiIiXat89i9WVsjipRqHQiMVNaWj0Qkc3tPDWYWsxy_SLGKtMqNmaOIxGFcELEVD2rkWOxKjs-xLUngpvjuvMXaKor1Ny27BrYUf8gctAfeX-G9bIoFxC45X3nwHHv-UDwqO7U3J4WJmJYV22g6JevYvq-3BQfMRPR9ur5Uvnv7d9o-k_-AWWGQQk</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Void-free uniform gap filling between thick PECVD silicon nitride waveguides</title><source>IEEE Xplore All Conference Series</source><creator>Mumlyakov, A.M. ; Dmitriev, N.Yu ; Shibalov, M.V. ; Trofimov, I.V. ; Filippov, I.A. ; Anikanov, A.A. ; Bilenko, I.A. ; Tarkhov, M.A.</creator><creatorcontrib>Mumlyakov, A.M. ; Dmitriev, N.Yu ; Shibalov, M.V. ; Trofimov, I.V. ; Filippov, I.A. ; Anikanov, A.A. ; Bilenko, I.A. ; Tarkhov, M.A.</creatorcontrib><description>In this paper, we demonstrate novel fabrication technology for silicon nitride photonics aimed at solving the problem of defects (void) in the region of closely located waveguides. The proposed technology allows to achieve full filling gaps between 1um-high silicon nitride waveguides located at distance from 200 nm. Fabricated using this technology structures containing high-Q ring microresonators features significantly less coupling rate dispersion at 1510-1620 nm wavelength range, which, in turn, considerably improve the repeatability and yield of fabrication process.</description><identifier>EISSN: 2642-5580</identifier><identifier>EISBN: 9798350390674</identifier><identifier>DOI: 10.1109/ICLO59702.2024.10624194</identifier><language>eng</language><publisher>IEEE</publisher><subject>Filling ; integrated optics ; Optical device fabrication ; Ring lasers ; Silicon ; Silicon nitride ; Structural rings ; void-filling ; Waveguide lasers</subject><ispartof>2024 International Conference Laser Optics (ICLO), 2024, p.401-401</ispartof><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/10624194$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,27904,54533,54910</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/10624194$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Mumlyakov, A.M.</creatorcontrib><creatorcontrib>Dmitriev, N.Yu</creatorcontrib><creatorcontrib>Shibalov, M.V.</creatorcontrib><creatorcontrib>Trofimov, I.V.</creatorcontrib><creatorcontrib>Filippov, I.A.</creatorcontrib><creatorcontrib>Anikanov, A.A.</creatorcontrib><creatorcontrib>Bilenko, I.A.</creatorcontrib><creatorcontrib>Tarkhov, M.A.</creatorcontrib><title>Void-free uniform gap filling between thick PECVD silicon nitride waveguides</title><title>2024 International Conference Laser Optics (ICLO)</title><addtitle>ICLO</addtitle><description>In this paper, we demonstrate novel fabrication technology for silicon nitride photonics aimed at solving the problem of defects (void) in the region of closely located waveguides. The proposed technology allows to achieve full filling gaps between 1um-high silicon nitride waveguides located at distance from 200 nm. Fabricated using this technology structures containing high-Q ring microresonators features significantly less coupling rate dispersion at 1510-1620 nm wavelength range, which, in turn, considerably improve the repeatability and yield of fabrication process.</description><subject>Filling</subject><subject>integrated optics</subject><subject>Optical device fabrication</subject><subject>Ring lasers</subject><subject>Silicon</subject><subject>Silicon nitride</subject><subject>Structural rings</subject><subject>void-filling</subject><subject>Waveguide lasers</subject><issn>2642-5580</issn><isbn>9798350390674</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2024</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><recordid>eNqFjsFqwkAUANeCoNT8geD7gaRvN7uJe46WFoR6kFwl6kt8GjeyG5X-fT20555mYC4jxExiIiXat89i9WVsjipRqHQiMVNaWj0Qkc3tPDWYWsxy_SLGKtMqNmaOIxGFcELEVD2rkWOxKjs-xLUngpvjuvMXaKor1Ny27BrYUf8gctAfeX-G9bIoFxC45X3nwHHv-UDwqO7U3J4WJmJYV22g6JevYvq-3BQfMRPR9ur5Uvnv7d9o-k_-AWWGQQk</recordid><startdate>20240701</startdate><enddate>20240701</enddate><creator>Mumlyakov, A.M.</creator><creator>Dmitriev, N.Yu</creator><creator>Shibalov, M.V.</creator><creator>Trofimov, I.V.</creator><creator>Filippov, I.A.</creator><creator>Anikanov, A.A.</creator><creator>Bilenko, I.A.</creator><creator>Tarkhov, M.A.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>20240701</creationdate><title>Void-free uniform gap filling between thick PECVD silicon nitride waveguides</title><author>Mumlyakov, A.M. ; Dmitriev, N.Yu ; Shibalov, M.V. ; Trofimov, I.V. ; Filippov, I.A. ; Anikanov, A.A. ; Bilenko, I.A. ; Tarkhov, M.A.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-ieee_primary_106241943</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2024</creationdate><topic>Filling</topic><topic>integrated optics</topic><topic>Optical device fabrication</topic><topic>Ring lasers</topic><topic>Silicon</topic><topic>Silicon nitride</topic><topic>Structural rings</topic><topic>void-filling</topic><topic>Waveguide lasers</topic><toplevel>online_resources</toplevel><creatorcontrib>Mumlyakov, A.M.</creatorcontrib><creatorcontrib>Dmitriev, N.Yu</creatorcontrib><creatorcontrib>Shibalov, M.V.</creatorcontrib><creatorcontrib>Trofimov, I.V.</creatorcontrib><creatorcontrib>Filippov, I.A.</creatorcontrib><creatorcontrib>Anikanov, A.A.</creatorcontrib><creatorcontrib>Bilenko, I.A.</creatorcontrib><creatorcontrib>Tarkhov, M.A.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Mumlyakov, A.M.</au><au>Dmitriev, N.Yu</au><au>Shibalov, M.V.</au><au>Trofimov, I.V.</au><au>Filippov, I.A.</au><au>Anikanov, A.A.</au><au>Bilenko, I.A.</au><au>Tarkhov, M.A.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Void-free uniform gap filling between thick PECVD silicon nitride waveguides</atitle><btitle>2024 International Conference Laser Optics (ICLO)</btitle><stitle>ICLO</stitle><date>2024-07-01</date><risdate>2024</risdate><spage>401</spage><epage>401</epage><pages>401-401</pages><eissn>2642-5580</eissn><eisbn>9798350390674</eisbn><abstract>In this paper, we demonstrate novel fabrication technology for silicon nitride photonics aimed at solving the problem of defects (void) in the region of closely located waveguides. The proposed technology allows to achieve full filling gaps between 1um-high silicon nitride waveguides located at distance from 200 nm. Fabricated using this technology structures containing high-Q ring microresonators features significantly less coupling rate dispersion at 1510-1620 nm wavelength range, which, in turn, considerably improve the repeatability and yield of fabrication process.</abstract><pub>IEEE</pub><doi>10.1109/ICLO59702.2024.10624194</doi></addata></record>
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subjects Filling
integrated optics
Optical device fabrication
Ring lasers
Silicon
Silicon nitride
Structural rings
void-filling
Waveguide lasers
title Void-free uniform gap filling between thick PECVD silicon nitride waveguides
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-27T02%3A24%3A04IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_CHZPO&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Void-free%20uniform%20gap%20filling%20between%20thick%20PECVD%20silicon%20nitride%20waveguides&rft.btitle=2024%20International%20Conference%20Laser%20Optics%20(ICLO)&rft.au=Mumlyakov,%20A.M.&rft.date=2024-07-01&rft.spage=401&rft.epage=401&rft.pages=401-401&rft.eissn=2642-5580&rft_id=info:doi/10.1109/ICLO59702.2024.10624194&rft.eisbn=9798350390674&rft_dat=%3Cieee_CHZPO%3E10624194%3C/ieee_CHZPO%3E%3Cgrp_id%3Ecdi_FETCH-ieee_primary_106241943%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=10624194&rfr_iscdi=true