Record Performance in GAA 2D NMOS and PMOS Using Monolayer MoS2 and WSe2 with Scaled Contact and Gate Length

2D transition metal dichalcogenides are promising candidates as channel material choice in ultimately scaled CMOS. We report record performance in GAA 2D NMOS transistors using monolayer MoS 2 with three advances: scaled gate length (Lg) down to 25nm, scaled contact length (Lc) of 38nm, and the elim...

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Main Authors: Mortelmans, W., Buragohain, P., Rogan, C., Kitamura, A., Dorow, C.J., O'Brien, K.P., Ramamurthy, R., Lux, J., Zhong, T., Harlson, S., Gillispie, E., Wilson, T., Oni, A., Penumatcha, A., Kavrik, M., Maxey, K., Kozhakhmetov, A., Lin, C-C., Lee, S., Vyatskikh, A., Arefin, N., Fischer, P., Kevek, J., Tronic, T., Metz, M., Clendenning, S., Avci, U.
Format: Conference Proceeding
Language:English
Subjects:
2D CMOS
2D FET
Gallium arsenide
Ions
Logic gates
Metals
MoS 2
MOSFET
Performance evaluation
TMD
Very large scale integration
WSe 2
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Summary:2D transition metal dichalcogenides are promising candidates as channel material choice in ultimately scaled CMOS. We report record performance in GAA 2D NMOS transistors using monolayer MoS 2 with three advances: scaled gate length (Lg) down to 25nm, scaled contact length (Lc) of 38nm, and the elimination of the low-k "inter-layer" in the gate stack enabling the first fully high-k GAA 2D device. We achieve 90% yield for scaled Lg
ISSN:2158-9682
DOI:10.1109/VLSITechnologyandCir46783.2024.10631395