Assessment of the Transient Self-Heating Effect and its Impact on the Performance of Watt-Level RF Power Amplifier in a FinFET Technology

The dynamic behavior of self-heating effect in FinFET devices has a profound impact on the performance of RF circuits. Hence an accurate assessment of such transient thermal response is critical for designing successfully thermal-sensitive RF blocks in FinFET technology. This work shows, for the fir...

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Bibliographic Details
Main Authors: Dinh, T. V., Tam, S-W., Scholten, A. J., Tondelli, L., Pijper, R. M. T., Kondapalli, S. H., Xie, J., Wong, A., To, I., Asanovski, R., Selmi, L.
Format: Conference Proceeding
Language:English
Subjects:
Accuracy
digital pre-distortion
FinFET
Gallium arsenide
Performance evaluation
Power amplifiers
Radio frequency
radio frequency (RF)
RF power amplifier
Self-heating
thermal time constant
Time-frequency analysis
Very large scale integration
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Summary:The dynamic behavior of self-heating effect in FinFET devices has a profound impact on the performance of RF circuits. Hence an accurate assessment of such transient thermal response is critical for designing successfully thermal-sensitive RF blocks in FinFET technology. This work shows, for the first time, a physics-based multi-stage approach to evaluate the thermal network of a single RF multi-fin multi-finger FinFET transistor and the power cell comprised of such multiple transistors. This thermal assessment approach, which has been verified by intensive characterization of both on-wafer and in-packaged RF test chips, enables the first Watt-level RF power amplifier design in a baseline FinFET node.
ISSN:2158-9682
DOI:10.1109/VLSITechnologyandCir46783.2024.10631465