Replacement Metal Gate Process Extendible Beyond 2-nm Node with Superior Gate Conductivity

This paper describes a selective metal cap on replacement-metal-gate (RMG) for gate scaling with high conductivity. Gate length is reaching to 12 nm, as CMOS scaling continues. RMG requires multiple metal gate layers and occupy gate trench with high-resistivity work function layers. The lack of low-...

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Bibliographic Details
Main Authors: Yoshida, Naomi, Fisher, Ilanit, Ren, He, Lin, Chi-Chou, Shen, Chenfei, Lin, Yongjing, Xu, Yi, Chen, Michael S-.C., Naik, Mehul
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Degradation
Logic gates
Performance evaluation
Technological innovation
Tungsten
Very large scale integration
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Summary:This paper describes a selective metal cap on replacement-metal-gate (RMG) for gate scaling with high conductivity. Gate length is reaching to 12 nm, as CMOS scaling continues. RMG requires multiple metal gate layers and occupy gate trench with high-resistivity work function layers. The lack of low-resistivity W fill causes gate conductance degradation and negatively impacts CMOS performance. Thin highly conductive metal cap on top of RMG is an effective way to maintain high gate conductivity with extremely scaled gate trench. The technology is extendible to 2 nm node GAA-FET and beyond.
ISSN:2158-9682
DOI:10.1109/VLSITechnologyandCir46783.2024.10631470