Reliable Low-Voltage FeRAM Capacitors for High-Speed Dense Embedded Memory in Advanced CMOS

For the first time, anti-ferroelectric (AFE) hafnia-based capacitors compatible to advanced CMOS are demonstrated by (i) bit-line (BL) and plate-line (PL) WRITE (W) voltage scaling down to 1V and 1.3V, respectively, (ii) BL READ (R) voltage scaling down 0.6V, and (iii) robust 10yr reliability at ele...

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Main Authors: Chang, S. -C., Neumann, C., Alpizar, B. Granados, Atanasov, S., Peck, J., Kabir, N., Liao, Y. -C., Shivaraman, S., Chakraborty, W., Haratipour, N., Tung, I. -C., Nikitin, V., Allen, G., Hoff, T., Oni, A., Tronic, T., Roy, A., Li, H., Hamzaoglu, F., Metz, M., Young, I., Kavalieros, J., Avci, U.
Format: Conference Proceeding
Language:English
Subjects:
Breakdown voltage
Capacitors
CMOS
Embedded Memory
FeRAM
Ferroelectric films
Low voltage
Memory management
Nonvolatile memory
Random access memory
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Summary:For the first time, anti-ferroelectric (AFE) hafnia-based capacitors compatible to advanced CMOS are demonstrated by (i) bit-line (BL) and plate-line (PL) WRITE (W) voltage scaling down to 1V and 1.3V, respectively, (ii) BL READ (R) voltage scaling down 0.6V, and (iii) robust 10yr reliability at elevated temperature in both fatigue and breakdown, while delivering switching charge for high-speed dense embedded memory. Also, frequency-dependent endurance in ferroelectric (FE) or AFE hafnia is shown to unveil the worst-case scenario for cache-level memory application as well as complex interactions between defects and electric field. Finally, 2.4 to 6.5X cell density over SRAM and sub-100fJ W/ R cell energy are projected for embedded FeRAM, showing integrating low-voltage AFE capacitors with advanced logic has great performance potential for next-generation low-power and high-speed dense embedded memory.
ISSN:2158-9682
DOI:10.1109/VLSITechnologyandCir46783.2024.10631474