Mechanical Stress Effects on Dielectric Leakage and Interconnection Integrity in 3D NAND Flash Memory

This paper presents a comprehensive study of stress-induced leakage in dielectrics, combining structural analysis with electrical transport properties in the latest 3D NAND Flash memory products. Stress-induced leakage is prominently observed near wide aluminum metal patterns, as changes in stress a...

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Main Authors: Lee, Sehoon, Lee, Jieun, Jang, Sungpil, Kim, Sujeong, Kim, Choelgyu, Sae-Jin Kim, Narae Jeong, Kang, Jisoo, Hong, Juhee, Kim, Dong-Kyu, Lim, Junhee, Park, Sejun, Hong, Seungwan, Hur, Sunghoi
Format: Conference Proceeding
Language:English
Subjects:
3D NAND
aluminum interconnection. Schottky emission
Conductivity
dielectric leakage
Discrete Fourier transforms
Flash memory
Integrated circuit interconnections
mechanical stress
Silicon compounds
Tensile stress
Three-dimensional displays
Very large scale integration
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Summary:This paper presents a comprehensive study of stress-induced leakage in dielectrics, combining structural analysis with electrical transport properties in the latest 3D NAND Flash memory products. Stress-induced leakage is prominently observed near wide aluminum metal patterns, as changes in stress and strain significantly influence the dielectric properties. Through electrical analysis and DFT simulations, we successfully analyzed electrical transport phenomenon, which is explained by Schottky emission with decreased electrical barrier height in amorphous SiO 2 under tensile stress. We also proposed process improvements, including adjustments in annealing temperature and air-gap to mitigate leakage issues.
ISSN:2158-9682
DOI:10.1109/VLSITechnologyandCir46783.2024.10631518