A Novel Chalcogenide Based CuGeSe Selector Only Memory (SOM) for 3D Xpoint and 3D Vertical Memory Applications

We present a new selector only memory material, CuGeSe, with low program current, fast switch speed properties and good endurance. The switching mechanism is studied in depth and element migration is verified during the switching of the material. We also discuss application of the material for 3D Xp...

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Bibliographic Details
Main Authors: Chien, W.C., Zheng, J.X., Yeh, C.W., Gignac, L.M., Cheng, H.Y., Liu, Z.L., Grun, A., Sung, C.L., Lai, E.K., Cheng, S., Cheng, C.W., Buzi, L., Ray, A., Bishop, D., Bruce, R.L., BrightSky, M., Lung, H.L.
Format: Conference Proceeding
Language:English
Subjects:
Chalcogenides
Leakage currents
Switches
Testing
Three-dimensional displays
Very large scale integration
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Summary:We present a new selector only memory material, CuGeSe, with low program current, fast switch speed properties and good endurance. The switching mechanism is studied in depth and element migration is verified during the switching of the material. We also discuss application of the material for 3D Xpoint and 3D vertical memory, as well as propose a modified 1/3 V testing scheme for 3D vertical memory to mitigate leakage current and improve scaling.
ISSN:2158-9682
DOI:10.1109/VLSITechnologyandCir46783.2024.10631520