Improved Uniformity and Excellent Endurance Characteristics of TaOx-Based RRAM by Laser-Mediated Interface Engineering

In this work, we report a laser-mediated interface engineering method to improve RRAM performances. Compared with pristine TiN/TaO x /TaN devices, a 10x uniformity improvement is achieved when a 0.4 J/cm 2 laser is applied to irradiate the TaO x layer. Moreover, an excellent endurance (10 6 ) with h...

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Bibliographic Details
Main Authors: Wu, Lindong, Wang, Qishen, Liao, Hongxu, Ban, Chaoyi, Shan, Linbo, Wang, Zongwei, Wang, Yuan, Cai, Yimao
Format: Conference Proceeding
Language:English
Subjects:
Conferences
Controllability
Electric potential
Electrodes
interface engineering
Laser-mediated
Lasers
Performance evaluation
RRAM
Tin
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Summary:In this work, we report a laser-mediated interface engineering method to improve RRAM performances. Compared with pristine TiN/TaO x /TaN devices, a 10x uniformity improvement is achieved when a 0.4 J/cm 2 laser is applied to irradiate the TaO x layer. Moreover, an excellent endurance (10 6 ) with high on/off ratio (156) is obtained. The characterization results show that laser treatment can effectively inhibit oxygen exchange at the interface between TaO x layer and TiN electrode to improve controllability of the filament. Our study shows the potential of laser-mediated interface engineering for achieving high-performance RRAMs.
ISSN:2161-4644
DOI:10.1109/SNW63608.2024.10639217