Through Silicon Via (TSV)-Embedded Graphene-Silicon Photodetector Array for 3D Stacked CMOS Integration

Heterojunctions of monolayer graphene and silicon, which form shallow junctions with enhanced photoresponse, have emerged as an attractive candidate for highly sensitive weak-light photodetection due to fast response, high switching ratio, and low dark-current. However, in the field of 2D material-s...

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Bibliographic Details
Main Authors: Wang, Xiaochen, Xie, Yongliang, Ning, Hao, Tian, Feng, Xie, Yunfei, Anwar, Muhammad Abid, Lin, Jiangming, Bodepudi, Srikrishna Chanakya, Yu, Bin, Xu, Yang
Format: Conference Proceeding
Language:English
Subjects:
3D stacking
CMOS technology
graphene
Heterojunctions
photodetector
Photodetectors
Production
Silicon
Technological innovation
Three-dimensional displays
TSV
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Summary:Heterojunctions of monolayer graphene and silicon, which form shallow junctions with enhanced photoresponse, have emerged as an attractive candidate for highly sensitive weak-light photodetection due to fast response, high switching ratio, and low dark-current. However, in the field of 2D material-silicon heterojunctions, the challenge of integrating with CMOS technology hinders widespread application. This paper reports a through silicon via (TSV)-embedded monolayer graphene-silicon (Gr-Si) heterojunction photodetector array. Unlike the state-of-the-art, this advancement unlocks the large-scale application potential of monolayer Gr-Si photodetectors by (1) utilizing TSV to overcome CMOS compatibility issues and improving 3D integration capability, (2) introducing wafer-scale pre-pixel & TSV processes and incorporating them with the chemical vapor deposition (CVD)-grown Gr-Si photodetectors, facilitating efficient large-scale production.
ISSN:2474-3755
DOI:10.1109/NEMS60219.2024.10639915