Ge-on-Si APD with Diagonal Dual Injection in 45nm SOl SiPh Process

A small form factor high gain Ge-on-Si APD is demonstrated in 45nm silicon photonic technology. The design utilizes dual optical injection to germanium absorption region using a pair of waveguide tapers. For 1550 nm wavelength the device achieves ~14 A/A gain at 3.5V reverse bias

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Bibliographic Details
Main Authors: Shehtab Dhrubo, Md Nabil, Karlicek, Robert F., Hella, Mona M.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Avalanche photodiodes
Germanium
Optical design
Optical waveguides
Silicon photonics
Online Access:Request full text
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Description
Summary:A small form factor high gain Ge-on-Si APD is demonstrated in 45nm silicon photonic technology. The design utilizes dual optical injection to germanium absorption region using a pair of waveguide tapers. For 1550 nm wavelength the device achieves ~14 A/A gain at 3.5V reverse bias
ISSN:2836-6832
DOI:10.1109/RAPID60772.2024.10646986