Single heterostructure lasers of PbS1-xSexand Pb1-xSnxSe with wide tunability

Single-heterostructure diode lasers formed by compositional interdiffusion in PbS 1-x Se x and Pb 1-x Sn x Se and by liquid-phase-epitaxy (LPE) in Pb 1-x Sn x Se show Performance characteristics significantly better than those observed in conventional homostructure lasers. Higher operating temperatu...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1977-08, Vol.13 (8), p.720-725
Main Authors: Linden, K., Nill, K., Butler, J.
Format: Article
Language:English
Subjects:
Annealing
Diode lasers
Extraterrestrial measurements
Instruments
Laser tuning
Monitoring
Photonic band gap
Pollution measurement
Spectroscopy
Temperature distribution
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Summary:Single-heterostructure diode lasers formed by compositional interdiffusion in PbS 1-x Se x and Pb 1-x Sn x Se and by liquid-phase-epitaxy (LPE) in Pb 1-x Sn x Se show Performance characteristics significantly better than those observed in conventional homostructure lasers. Higher operating temperatures were obtained for all compositions, with CW operation above 77 K being achieved for compositions corresponding to wavelengths from 4.1 to 12.7 μm. Single-ended, CW powers as high as 70 mW, corresponding to \eta_{ext} = 44 percent were observed in PbS 1-x Se x devices.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.1977.1069416