Ultrafast Control of Carrier Population in Germanium by Strong THz Field

Ultrafast carrier dynamics and population control in n-doped Ge is studied by THz pump-THz probe measurements at 300 K and 95 K temperatures, driven by strong-field THz pulses of 450 kV/cm field strength. We simulate the experiment by the Monte-Carlo method and reveal the large transient redistribut...

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Bibliographic Details
Main Authors: Gupta, Abhishek, Ostatnicky, Tomas, Gupta, Vineet, Sharma, Ashutosh, Fulop, Jozsef A.
Format: Conference Proceeding
Language:English
Subjects:
Absorption
Electrons
Germanium
Monte Carlo methods
Probes
Pulse measurements
Scattering
Temperature control
Temperature measurement
Transient analysis
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Summary:Ultrafast carrier dynamics and population control in n-doped Ge is studied by THz pump-THz probe measurements at 300 K and 95 K temperatures, driven by strong-field THz pulses of 450 kV/cm field strength. We simulate the experiment by the Monte-Carlo method and reveal the large transient redistribution of free carriers within the L valley, and between the L and X valleys. The absorption increase should be ascribed to the electron redistribution inside the L valley, rather than scattering into the Γ valley.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz60956.2024.10697637