Photoexcitation enhances carrier mobility at low temperatures in narrow-gap HgCdTe films

The characterization of carrier dynamics in mercury cadmium telluride (HgCdTe) thin films is essential for novel applications in long-wave infrared detection. Here, we conduct a novel study of ultrahigh carrier mobilities in narrow-gap HgCdTe films as measured by both terahertz time-domain spectrosc...

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Main Authors: Refvik, Nils B., Purschke, David N., Jensen, Charles E., Pan, Wenwu, Simpson, Howe R. J., Lei, Wen, Gu, Renjie, Antoszewski, Jarek, Umana-Membreno, Gilberto A., Faraone, Lorenzo, Hegmann, Frank A.
Format: Conference Proceeding
Language:English
Subjects:
Cadmium compounds
II-VI semiconductor materials
Impurities
Scattering
Semiconductor device measurement
Spectroscopy
Tellurium
Temperature measurement
THz-TDS
Time-domain analysis
Time-resolved terahertz spectroscopy
ultrafast carrier dynamics
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Summary:The characterization of carrier dynamics in mercury cadmium telluride (HgCdTe) thin films is essential for novel applications in long-wave infrared detection. Here, we conduct a novel study of ultrahigh carrier mobilities in narrow-gap HgCdTe films as measured by both terahertz time-domain spectroscopy (THz-TDS) at equilibrium and time-resolved THz spectroscopy (TRTS) after ultrafast photoexcitation. The observed THz transmission through the photoexcited samples is accurately modelled by a three-layer thin-film formula. At low temperatures, the carrier mobility obtained by TRTS is significantly higher than that obtained by THz-TDS. We attribute this enhancement in the low-temperature photocarrier mobility to suppression of impurity scattering by photoexcited holes.
ISSN:2162-2035
DOI:10.1109/IRMMW-THz60956.2024.10697658