Demonstration of Normally-Off N-Polar GaN Deep Recess HEMT

In this letter, we report the first normally-OFF N-polar GaN deep recess high electron mobility transistor (HEMT). Utilizing atomic layer etching (ALE), followed by acid treatment, we achieved normally-OFF operation through gate recess etching on an N-polar GaN deep recess HEMT epitaxial structure,...

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Bibliographic Details
Published in:IEEE microwave and wireless technology letters (Print) 2024-12, Vol.34 (12), p.1335-1338
Main Authors: Odabasi, Oguz, Khan, Md. Irfan, Khan, Kamruzzaman, Ahmadi, Elaheh
Format: Article
Language:English
Subjects:
AlGaN/GaN
atomic layer etching (ALE)
Breakdown
Current leakage
Current measurement
Epitaxial growth
Etching
Gallium nitride
Gallium nitrides
HEMTs
high electron mobility transistor (HEMT)
High electron mobility transistors
Leakage current
Leakage currents
Logic gates
Metalorganic chemical vapor deposition
N-polar GaN
normally-off
Organic chemicals
Organic chemistry
Performance evaluation
Power gain
Radio frequency
Semiconductor devices
Surface treatment
Threshold voltage
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Summary:In this letter, we report the first normally-OFF N-polar GaN deep recess high electron mobility transistor (HEMT). Utilizing atomic layer etching (ALE), followed by acid treatment, we achieved normally-OFF operation through gate recess etching on an N-polar GaN deep recess HEMT epitaxial structure, with metal-organic chemical vapor deposition (MOCVD) SiNx serving as the gate insulator. A threshold voltage of +0.5 V was attained, along with impressive metrics, such as low OFF-state drain leakage current (12 nA/mm), OFF-state gate leakage current (28 nA/mm), and ON-state gate current (35 nA/mm). Remarkable performance parameters include a high on/off ratio of 5\times 10^{{7}} , drain OFF-state breakdown voltage of 53 V, and gate forward bias breakdown voltage of 5 V. Small signal measurements demonstrated a current-gain cutoff frequency ( f_{\text {T}} ) and power-gain cutoff frequency ( f_{\mathbf {MAX}} ) of 8.6 and 52.1 GHz, respectively, with a gate length of 0.6~\mu m. Furthermore, a competitive output power density of 5.1 W/mm with 50% power added efficiency was achieved at 4 GHz. Results underscore the potential of normally-off N-polar GaN deep recess HEMTs for both RF and high-voltage applications.
ISSN:2771-957X
2771-9588
DOI:10.1109/LMWT.2024.3468175