GaN Surface Acoustic Wave Resonaters on Si Substrate for RF Applications

In this manuscript, we demonstrated GaN/Si Surface Acoustic Wave (SAW) resonators on AlGaN/GaN heterostructure grown on Si substrate, and investigated the impact of the variation of the geometric parameters such as the thickness of GaN film, interdigital electrode width and number of pairs and delay...

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Bibliographic Details
Main Authors: Wang, Liangyun, Chen, Shuying, Xing, Weichuan, Liu, Zhihong, Du, Hanghai, Hou, Songyan, Zhang, Jincheng, Hao, Yue
Format: Conference Proceeding
Language:English
Subjects:
Delays
Electrodes
frequency response
GaN
Insertion loss
Radio frequency
Resonant frequency
Resonators
Silicon
Substrates
Surface acoustic wave (SAW) filter
Surface acoustic wave devices
Surface acoustic waves
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Summary:In this manuscript, we demonstrated GaN/Si Surface Acoustic Wave (SAW) resonators on AlGaN/GaN heterostructure grown on Si substrate, and investigated the impact of the variation of the geometric parameters such as the thickness of GaN film, interdigital electrode width and number of pairs and delay distance. It was shown that the Rayleigh wave phase velocity is negatively correlated with GaN film thickness. The device showed lower loss and better bandwidth suppression performance as the number of electrode pairs increases from 20 to 40 pairs. The reduction of both the interdigital electrode width and delay distance results in lower insertion loss. The introduction of SiO 2 layer on the device surface improves the temperature stability of device frequency and reduces the temperature coefficient of operating frequency (TCF) of the device to -24 ppm/°C.
ISSN:2691-0462
DOI:10.1109/ICICDT63592.2024.10717851