GaN Surface Acoustic Wave Resonaters on Si Substrate for RF Applications

• Main Authors: Wang, Liangyun, Chen, Shuying, Xing, Weichuan, Liu, Zhihong, Du, Hanghai, Hou, Songyan, Zhang, Jincheng, Hao, Yue
• Format: Conference Proceeding
• Language: English
• Subjects: Delays; Electrodes; frequency response; GaN; Insertion loss; Radio frequency; Resonant frequency; Resonators; Silicon; Substrates; Surface acoustic wave (SAW) filter; Surface acoustic wave devices; Surface acoustic waves
• ISSN: 2691-0462
• DOI: 10.1109/ICICDT63592.2024.10717851

In this manuscript, we demonstrated GaN/Si Surface Acoustic Wave (SAW) resonators on AlGaN/GaN heterostructure grown on Si substrate, and investigated the impact of the variation of the geometric parameters such as the thickness of GaN film, interdigital electrode width and number of pairs and delay distance. It was shown that the Rayleigh wave phase velocity is negatively correlated with GaN film thickness. The device showed lower loss and better bandwidth suppression performance as the number of electrode pairs increases from 20 to 40 pairs. The reduction of both the interdigital electrode width and delay distance results in lower insertion loss. The introduction of SiO 2 layer on the device surface improves the temperature stability of device frequency and reduces the temperature coefficient of operating frequency (TCF) of the device to -24 ppm/°C.