A 21.3-to-30.1 GHz Reversed Current-reuse LNA with Load Regulation Enhancing Wideband Noise and Input Matching

• Main Authors: Liang, Chenglong, Gan, Suyuan, Tang, Bingjun, Gao, Zixun, Dong, Qian, Zhao, Ya, Xie, Yi, Xin, Youze, Zhang, Bing, Li, Dan, Geng, Li
• Format: Conference Proceeding
• Language: English
• Subjects: CMOS technology; Current measurement; current-reuse; Gain; High frequency; Impedance matching; LNA; load regulation; Noise; Noise matching; Noise measurement; Regulation; Topology; transformer; Wideband
• ISSN: 2643-1319
• DOI: 10.1109/ESSERC62670.2024.10719523

This paper presents a wideband simultaneous noise and input matching (SNIM) low-noise amplifier (LNA) with load regulation and g_{\mathrm{m}}-boosting techniques based on a reversed low power three-stage current-reuse topology. Based on magnetically coupled resonator (MCR), the load regulation technology also reduces the high frequency noise and extends the response bandwidth of the gain. Fabricated in 55-nm CMOS technology, the LNA achieves a measured power gain of 16.5 dB at 28 GHz with a -3-dB bandwidth (BW) of 8.8 GHz. Within the entire band of interest, the measured noise figure (NF) matching (\mathrm{NF}^{-} \mathrm{NF}_{\min }) is less than 0.2 dB and NF falls within the range of 4-4.5 dB. The LNA consumes only 3.38 mW from a 1.2-V supply, with a chip area of 550 \mu \mathrm{~m} \times 570 \mu \mathrm{~m}.