Highly Reliable Ruthenium-Cobalt Binary Liner for Advanced Node Cu Interconnect

In this paper, alternative Ruthenium-Cobalt Binary Liner (RCBL) instead of conventional Co liner with atomic layer deposition (ALD) TaN barrier metal was studied. ab initio simulation shows Co liner has various phases with different Cu wettability and its phase ratio with high wettability increases...

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Main Authors: Myeong, Gyuho, Jang, Junki, Kim, Kihyun, Lee, Jaeho, Park, Eunyoung, Jeon, Hoyun, Nam, Kyounghee, Jung, Eunji, Baek, Sung-Yeol, Lee, Ji-Hwan, Kim, Sungjun, Son, Won-Joon, Kim, Yoon-Suk, Kim, Chin, Park, Doowhan, Kim, Rak-Hwan, Ahn, Jeonghoon, Lee, Jongho
Format: Conference Proceeding
Language:English
Subjects:
Electrical resistance measurement
Foundries
Lattices
Liner
Logic
Metals
Reliability
Resistance
Semiconductor device measurement
Substrates
Time measurement
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Summary:In this paper, alternative Ruthenium-Cobalt Binary Liner (RCBL) instead of conventional Co liner with atomic layer deposition (ALD) TaN barrier metal was studied. ab initio simulation shows Co liner has various phases with different Cu wettability and its phase ratio with high wettability increases with Ru substrate rather than Ta substrate. Additionally, adhesion between barrier metal and liner increases in RCBL as lattice mismatch decreases. As a result reduction in 87% of Cu void and 14% of line resistance were achieved in relatively thin RCBL with high Cu wettability compared to conventional Co liner process. Manufacturability and reliability of RCBL process were also confirmed with logic chip yield and time dependent dielectric breakdown (TDDB) measurement of foundry product for advanced node.
ISSN:2380-6338
DOI:10.1109/IITC61274.2024.10732516