Fabrication and characteristics of ion beam etched cavity InP/InGaAsP BH lasers

A low temperature ion beam etching (IBE) process is successfully applied to facet mirror fabrication of 1.3 μm InGaAsP/InP buried heterostructure (BH) lasers. Ar ion beam etching characteristics of InP are studied and masking conditions are optimized for obtaining low-damage, vertical, and smooth et...

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Bibliographic Details
Published in:IEEE journal of quantum electronics 1987-06, Vol.23 (6), p.909-914
Main Authors: Bouadma, N., Hogrel, J., Charil, J., Carre, M.
Format: Article
Language:English
Subjects:
Aging
Argon
Etching
Identity-based encryption
Indium phosphide
Ion beams
Mirrors
Optical device fabrication
Temperature
Threshold current
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Summary:A low temperature ion beam etching (IBE) process is successfully applied to facet mirror fabrication of 1.3 μm InGaAsP/InP buried heterostructure (BH) lasers. Ar ion beam etching characteristics of InP are studied and masking conditions are optimized for obtaining low-damage, vertical, and smooth etched facets. Lasers fabricated by this technique have threshold currents and quantum efficiencies comparable to those of lasers with conventionally cleaved mirrors. CW operation at room temperature has been achieved. Initial experimental results of preliminary aging tests are also presented.
ISSN:0018-9197
1558-1713
DOI:10.1109/JQE.1987.1073404