Investigation of Photoemission at InGaN Vacuum-Traveling-Carrier Photodiodes for THz-wave Generation

We developed a vacuum-traveling-carrier photodiode utilizing a miniaturized InGaN photocathode structure and successfully observed photocurrent indicative of photoemission from the photocathode. The implemented photodiode architecture, incorporating a vacuum carrier transport layer with low capacita...

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Bibliographic Details
Main Authors: Qian, Chengyuan, Sugimoto, Yoshimasa, Ishii, Hiroyuki, Maeda, Tatsuro, Sato, Daiki, Nishitani, Tomohiro, Honda, Yoshio, Mikami, Yuya, Kato, Kazutoshi
Format: Conference Proceeding
Language:English
Subjects:
Capacitance
InGaN photocathode
Microwave photonics
Photocathodes
Photoconductivity
Photodiodes
Photoelectricity
terahertz-wave generation
Vacuum arcs
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Summary:We developed a vacuum-traveling-carrier photodiode utilizing a miniaturized InGaN photocathode structure and successfully observed photocurrent indicative of photoemission from the photocathode. The implemented photodiode architecture, incorporating a vacuum carrier transport layer with low capacitance, is anticipated to facilitate high-power terahertz wave generation exceeding 300 GHz.
ISSN:2768-346X
DOI:10.1109/MWP62612.2024.10736216