300-GHz-Band InP HBT Power Amplifier and InP-CMOS Hybrid Phased-Array Transmitter

• Main Authors: Jyo, Teruo, Abdo, Ibrahim, Hamada, Hiroshi, Nagatani, Munehiko, Pander, Adam, Wakita, Hitoshi, Mutoh, Miwa, Shiratori, Yuta, Kitayama, Daisuke, Gomez, Carrel Da, Wang, Chun, Hatano, Kota, Liu, Chenxin, Fadila, Ashbir Aviat, Pang, Jian, Shirane, Atsushi, Okada, Kenichi, Takahashi, Hiroyuki
• Format: Conference Proceeding
• Language: English
• Subjects: 300-GHz band; Arrays; Data communication; Flip-chip-on-chip; III-V semiconductor materials; Indium phosphide; InP HBT; InP-CMOS hybrid; Integrated circuits; Mixers; Phased array TX; Phased arrays; power amplifier; Power amplifiers; Transmitters; Wireless communication
• ISSN: 2831-4999
• DOI: 10.1109/BCICTS59662.2024.10745694

In this invited paper, we introduce a 300-GHz-band power amplifier (PA) IC and module designed and fabricated in 250-nm InP DHBT technology and a 300-GHz-band InP-CMOS hybrid phased array transmitter for 6G. Our PA module achieved a maximum gain of 30 dB around 260 GHz and maintained over 20 dB within a range from 220 to 310 GHz. It also achieved a saturation power of 9 \mathbf{~ d B m} at 270 GHz and demonstrated point-to-point wireless data transmission with a data rate of 100 Gbps at a distance of 40 m. Our phased array transmitter, in which four InP-HBT PA ICs and CMOS ICs containing mixers and control functions are integrated onto the same printed circuit board, achieved a maximum EIRP of \mathbf{8. 4 ~ d B m} and steering range of 36° and successfully demonstrated wireless data transmission of up to 30 Gbps over a distance of 50 cm with beam steering.