Full Wafer Spalling and Cell Processing of Devices Grown on GaAs(100) Substrates

Controlled spalling has proven to be a promising substrate reuse technology for III-V photovoltaics due to its potential for high throughput, relatively low cost, and ability to fabricate high-quality devices. However, previous studies have only demonstrated the ability to produce small-scale, singl...

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Bibliographic Details
Main Authors: Yoo, Nicholas J., Collins, Sarah, Forcade, Gavin P., McMahon, William E., Young, Michelle, Goldsmith, John, Packard, Corinne E., Steiner, Myles A.
Format: Conference Proceeding
Language:English
Subjects:
Costs
Gallium arsenide
Optimization
Photovoltaic systems
Substrates
Surface treatment
Throughput
Online Access:Request full text
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Summary:Controlled spalling has proven to be a promising substrate reuse technology for III-V photovoltaics due to its potential for high throughput, relatively low cost, and ability to fabricate high-quality devices. However, previous studies have only demonstrated the ability to produce small-scale, single-cell devices on a small area of a substrate. In this study, we show the ability to spall a full 2" GaAs wafer and process multiple 1-J GaAs cells across its surface. Completing full edge to edge spalls and processing thin films into high-quality cells are still in the early stages of development, and more optimization work needs to be done to maximize yield. A preliminary attempt at a full wafer spall and thin film processing produced 18 cells with an efficiency >=15% out of a total 43 cells.
ISSN:2995-1755
DOI:10.1109/PVSC57443.2024.10749563