Optical, Structural, and Hot Carrier Properties of Hafnium Oxynitride from HCSC Perspective

In this article, we present hafnium oxynitride (HfxONy) as a potential Hot Carrier Solar Cell (HCSC) absorber material and report its optical, structural, and hot carrier properties. Thin films of HfxONy have been synthesized using atomic layer deposition. The films show the presence of mixed cubic...

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Bibliographic Details
Main Authors: Pratik, Ayush, Sharma, Abhinav S., Conibeer, Gavin, Shrestha, Santosh
Format: Conference Proceeding
Language:English
Subjects:
Annealing
Hafnium
Hot carriers
Optical films
Optical materials
Phonons
Photoluminescence
Photonic band gap
Photovoltaic cells
Photovoltaic systems
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Summary:In this article, we present hafnium oxynitride (HfxONy) as a potential Hot Carrier Solar Cell (HCSC) absorber material and report its optical, structural, and hot carrier properties. Thin films of HfxONy have been synthesized using atomic layer deposition. The films show the presence of mixed cubic and monoclinic phases upon annealing at 850°C for 30-60s. The experimentally measured phonon band gap is in very close agreement with the theoretically predicted value of 250-275 cm 1 for cubic Hf 2 ON 2 . XPS analysis suggests the presence of Hf-N-O bonds in the core of the thin films which is beneficial from the HCSC perspective. The absorbance of the films increases from around 700 nm (to lower wavelengths) suggesting the semiconducting behavior of the annealed films. Time-resolved photoluminescence studies give an enhanced lifetime of the charge carriers of the order of 50 ns.
ISSN:2995-1755
DOI:10.1109/PVSC57443.2024.10749677