1D Silicon Nanostructures for Detection of Volatile Organic Compounds

In this work, ethanol vapor diode sensors based on silicon nanowires (SiNWs) were fabricated. SiNWs were obtained by metal-assisted chemical etching technique (MACE). Surface morphology, electrical and gas sensitive characteristics were studied. It was determined the influence of MACE synthesis para...

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Bibliographic Details
Main Authors: Linevych, Yaroslav, Koval, Viktoriia, Dusheiko, Mykhailo, Lakyda, Maryna
Format: Conference Proceeding
Language:English
Subjects:
Chemical sensors
Etching
Ethanol
ethanol vapor sensor
Gas detectors
metal-assisted chemical etching
Nanowires
Performance evaluation
Sensitivity
Sensor phenomena and characterization
Silicon
silicon diodes
silicon nanowires
Surface morphology
volatile organic compounds
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Summary:In this work, ethanol vapor diode sensors based on silicon nanowires (SiNWs) were fabricated. SiNWs were obtained by metal-assisted chemical etching technique (MACE). Surface morphology, electrical and gas sensitive characteristics were studied. It was determined the influence of MACE synthesis parameters on sensor efficiency. Also we showed the effect of presence of textured surface of the silicon wafer and additional processing of it in the isotropic/anisotropic etchants on the device characteristics. The obtained sensors are characterized by a rectification ratio of 1836 and a response value to the gas analyte (ethanol) of 25, which are 11 and 6 times higher than for a silicon sensor without SiNWs, respectively.
ISSN:2693-3535
DOI:10.1109/ELNANO63394.2024.10756859