Analysis of bulk acoustic wave response in ZnO based structures using transmission-line method

Piezoelectric thin film ZnO and its ternary alloy MgZnO have broad applications in transducers, resonators, filters and sensors. In ZnO based multi-layer piezoelectric device structures, such as ZnO on r-Al/sub 2/O/sub 3/, multi-acoustic wave mode coupling between each layer in the multilayer struct...

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Bibliographic Details
Main Authors: Wittstruck, R.H., Tong, X., Emanetoglu, N.W., Wu, P., Chen, Y., Lu, Y., Ballato, A.
Format: Conference Proceeding
Language:English
Subjects:
Acoustic sensors
Acoustic transducers
Acoustic wave devices, piezoelectric and piezoresistive devices
Acoustic waves
Applied sciences
Electrodes
Electronics
Exact sciences and technology
Piezoelectric films
Piezoelectric transducers
Resonator filters
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thin film sensors
Transmission lines
Zinc oxide
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Summary:Piezoelectric thin film ZnO and its ternary alloy MgZnO have broad applications in transducers, resonators, filters and sensors. In ZnO based multi-layer piezoelectric device structures, such as ZnO on r-Al/sub 2/O/sub 3/, multi-acoustic wave mode coupling between each layer in the multilayer structure must be considered. In this paper, we use transmission line representation to analyze frequency response of a structure based on piezoelectric Mg/sub x/Zn/sub 1-x/O. The structure is Al/Mg/sub x/Zn/sub 1-x/O/n/sup ++/ ZnO/r-sapphire, where the Al and n/sup ++/ ZnO layers serve as top and bottom electrodes, respectively. Due to the crystalline orientation of the n/sup ++/ ZnO electrode and r-plane sapphire used in this work, there exist quasi shear and longitudinal wave modes in the device. The simulation results and measured device response show general agreement.
DOI:10.1109/FREQ.2002.1075852