Generation of microwaves at frequencies above 100 GHz with a GaAs/AlAs superlattice

We report on the generation of microwaves at frequencies above 100 GHz with a semiconductor superlattice device. We made use of the negative differential conductivity of an n-doped GaAs/AlAs superlattice. In this contribution we report on a higher harmonic superlattice oscillator for radiation at 17...

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Bibliographic Details
Main Authors: Haeussler, M., Brandl, J., Schomburg, E., Renk, K.F., Pavel'ev, D.G., Koschurinov, Yu
Format: Conference Proceeding
Language:English
Subjects:
Conductivity
Frequency
Gallium arsenide
High power microwave generation
Microwave devices
Microwave generation
Microwave oscillators
Power harmonic filters
Power system harmonics
Semiconductor superlattices
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Summary:We report on the generation of microwaves at frequencies above 100 GHz with a semiconductor superlattice device. We made use of the negative differential conductivity of an n-doped GaAs/AlAs superlattice. In this contribution we report on a higher harmonic superlattice oscillator for radiation at 175 GHz with a power of the order of 100 μW. The oscillator consisted of a superlattice device, mounted in a cavity and connected via a coaxial line with a bandstop filter (stopband from 75 GHz to 200 GHz) to a bias supply. Beside the emission at 175 GHz, oscillations at 35 GHz and 70 GHz occurred in the bias circuit.
DOI:10.1109/ICIMW.2002.1076082