Displacement Damage and Total Ionizing Dose induced by 3-MeV Protons in SiC Vertical Power MOSFETs

The radiation effects in SiC power MOSFETs induced by 3-MeV protons at high fluence are evaluated. Significant parametric shifts are observed due to DD and TID depending on the bias condition and technology generation. Electrical characterizations are used to investigate the on-state behavior of the...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2024-11, p.1-1
Main Authors: Martinella, C., Bonaldo, S., Bagatin, M., Gerardin, S., Fur, N., Gassenmeier, V., Goncalves de Medeiros, H., Paccagnella, A., Grossner, U.
Format: Article
Language:English
Subjects:
Degradation
JFETs
Logic gates
MOSFET
power devices
Protons
Resistance
SiC power MOSFETs
Silicon
Silicon carbide
Threshold voltage
TID
Transconductance
ultra-high doses
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Summary:The radiation effects in SiC power MOSFETs induced by 3-MeV protons at high fluence are evaluated. Significant parametric shifts are observed due to DD and TID depending on the bias condition and technology generation. Electrical characterizations are used to investigate the on-state behavior of the MOSFETs. Results revealed a substantial drop of the on-state current and transconductance induced by DD and charge-carrier compensation at fluences of 6.72×10 12 cm -2 and above, independently from the gate-bias condition during irradiation. The increase of drift resistance and the decrease of gate-drain capacitance indicate effects related to DD in the drift and substrate region of the device, as also supported by TCAD simulations.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2024.3505058