On the Importance of Physical Model Parameters for PUF Performance: A Case Study on BFO Memristors

A common approach when designing a memristorbased Physical Unclonable Function (PUF) is to quantize directly observable electrical quantities. While this is a straightforward approach, it suffers from a problem: It remains unclear which effects underly the extracted entropy. As a consequence, it is...

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Bibliographic Details
Main Authors: Ruchti, Jonas, Vegesna, Sahitya V., Rayapati, Venkata Rao, Schmidt, Heidemarie, Pehl, Michael
Format: Conference Proceeding
Language:English
Subjects:
Circuits
Correlation
Entropy
Integrated circuit modeling
Integrated circuit reliability
interface-type memristor
key storage
Memristors
physical model
Physical unclonable function
Quantization (signal)
read branch
reliability
static internal state variables
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Summary:A common approach when designing a memristorbased Physical Unclonable Function (PUF) is to quantize directly observable electrical quantities. While this is a straightforward approach, it suffers from a problem: It remains unclear which effects underly the extracted entropy. As a consequence, it is hard to counteract detrimental effects, e.g. bias and correlation, due to their unknown causes, and to optimize measurement and quantization techniques. This work provides the foundation to base a PUF on physical model parameters extracted from I-V curve measurements, using the reading branch of a BiFeO 3 (BFO) memristor as an example. The work outlines possible avenues for deriving reliable and high-entropy PUF responses from such parameters in general and concretely for BFO memristors using experimental data from a laboratory sample with 129 memristive cells.
ISSN:2640-5563
DOI:10.1109/DCIS62603.2024.10769190