Luminescent Defects in ZnO Thin Films: Effect of the Deposition Temperature and Thermal Treatment

In this work, ZnO thin films were deposited by RF magnetron sputtering at substrate temperatures ranging from 100°C to 700°C. The Williamson-Hall's approximation through the uniform stress deformation model (USDM) allowed the estimation of the stress and the size of the wurtzite crystal phase i...

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Bibliographic Details
Main Authors: Rios, Juan Ramirez, Aviles Bravo, Jose Juan, Perez Garcia, Sergio Alfonso, Moreno, Mario Moreno, Ramos Serrano, Juan Ramon, Sanchez, Alfredo Morales
Format: Conference Proceeding
Language:English
Subjects:
Annealing
II-VI semiconductor materials
Luminescent defects
oxygen vacancy
Sputtering
Strain
Stress
Substrates
Temperature control
Temperature distribution
Williamson Hall's approximation
X-ray scattering
Zinc oxide
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Summary:In this work, ZnO thin films were deposited by RF magnetron sputtering at substrate temperatures ranging from 100°C to 700°C. The Williamson-Hall's approximation through the uniform stress deformation model (USDM) allowed the estimation of the stress and the size of the wurtzite crystal phase in these films. The sample deposited at 700 °C exhibited the best crystallinity; then, it was subjected to thermal treatment at 900 °C and 1000 °C. This annealing process allowed to observe a relationship between the intensities of (103)/(002) XRD peaks with the visible/UV ratio photoluminescence peaks. This observation allows to estimate that the intensity of non-basal plane (103) is related to the generation of oxygen vacancies (V O ) defects in the ZnO films.
ISSN:2642-3766
DOI:10.1109/CCE62852.2024.10770940