Low-cost and low-voltage Si/SiGe phototransistor with high responsivity at 900nm for microwave photonics applications

This paper presents performances of Si/SiGe heterojunction bipolar phototransistors (HPT) used for microwave photonics communication receiver link around 850nm. SiGe phototransistors are designed in an industrial 55-nm SiGe BiCMOS from STMicroelectronics without any change in the layers technology p...

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Bibliographic Details
Published in:IEEE electron device letters 2024-12, p.1-1
Main Authors: Thary, V., Algani, C., Chevalier, P., Polleux, J.-L.
Format: Article
Language:English
Subjects:
BiCMOS integrated circuits
Couplings
Integrated optics
microwave photonics communication
Optical coupling
Optical fiber devices
Optical fibers
Optical receivers
Optical saturation
Phototransistors
Si/SiGe Phototransistor
Stimulated emission
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Summary:This paper presents performances of Si/SiGe heterojunction bipolar phototransistors (HPT) used for microwave photonics communication receiver link around 850nm. SiGe phototransistors are designed in an industrial 55-nm SiGe BiCMOS from STMicroelectronics without any change in the layers technology process. Different horizontal geometries of HPTs and biasing techniques were evaluated. The static responsivity of a 20×20μm² optical window HPT reached 20.7 A/W at 900nm. This is the highest static responsivities reported for a fully-integrated Si/SiGe HPT with vertical illumination. A 1.6-GHz bandwidth for a 10.5-A/W static responsivity was achieved for a 5×5μm² optical window HPT using current bias.
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2024.3521117