Design and Lag Compansated Control of a GaN Based Phase Shifted Full Bridge Converter

This paper presents the design and modeling of a Phase Shifted Full Bridge (PSFB) converter utilizing Gallium Nitride (GaN) MOSFETs, with a focus on control strategy development to optimize converter performance. The converter is designed to operate within an input voltage range of 200-400V, with a...

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Bibliographic Details
Main Authors: Bayram, Selim, Kayisli, Korhan, Nasri, Abdelfatah
Format: Conference Proceeding
Language:English
Subjects:
Bridge circuits
Control Strategy
Density measurement
Gallium nitride
GaN MOSFET
High-Efficiency Power Conversion
High-Frequency Applications
MOSFET
Phase Shifted Full Bridge Converter
Phase-Shift Modulation
Power Density
Power Electronics
Power generation
Power system measurements
Simulation
Switching frequency
Voltage control
Zero voltage switching
Zero-Voltage Switching (ZVS)
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Summary:This paper presents the design and modeling of a Phase Shifted Full Bridge (PSFB) converter utilizing Gallium Nitride (GaN) MOSFETs, with a focus on control strategy development to optimize converter performance. The converter is designed to operate within an input voltage range of 200-400V, with a switching frequency of 500kHz, delivering an output power of 500W at 28V. The high switching frequency enabled by GaN MOSFETs allows for significant reductions in size and weight of the converter, while maintaining high efficiency. This study delves into the detailed modeling of the PSFB topology, emphasizing the challenges and solutions in implementing an effective control strategy. Simulation results demonstrate the converter's ability to maintain stable and efficient operation across the specified input voltage range and varying load conditions, providing valuable insights into the design of high-frequency, high-power density converters.
ISSN:2572-6013
DOI:10.1109/ICRERA62673.2024.10815476