Trap-assisted tunneling in MOS structures with ultrathin SiO/sub 2

The conductivity in SiO/sub 2//p-Si structures with 13 nm thick SiO/sub 2/, layer, subjected to hydrogen plasma at 300/spl deg/C, was investigated. The I-V characteristics of these structures were measured in the accumulation regime under electric field in the range (2-7) /spl times/ 10/sup 6/ V/cm...

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Bibliographic Details
Main Authors: Simeonov, S., Yurukov, I., Kafedjiiska, E., Szekeres, A.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance-voltage characteristics
Conductivity
Hydrogen
Plasma measurements
Plasma properties
Plasma temperature
Plasma transport processes
Temperature measurement
Tunneling
Voltage
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Summary:The conductivity in SiO/sub 2//p-Si structures with 13 nm thick SiO/sub 2/, layer, subjected to hydrogen plasma at 300/spl deg/C, was investigated. The I-V characteristics of these structures were measured in the accumulation regime under electric field in the range (2-7) /spl times/ 10/sup 6/ V/cm at temperatures ranging 78-300 K. The obtained results suggest that the current through the oxide is carried out by inter-trap tunneling.
DOI:10.1109/SMICND.2002.1105877