V-Band GaAs Gunn Diode

The contradictions between the thermal parameters and microwave parasitic parameters in mm-wave Gunn diodes can be released by reasonable assumption for the thermal-conducting model of devices and practical analysis of microwave parasitic parameters. The corresponding formulas and curves are derived...

Full description

Saved in:
Bibliographic Details
Main Authors: Chen Xiaojian, Deng Yanmao, Huang Zhenqi
Format: Conference Proceeding
Language:English
Subjects:
Chemical technology
Circuit stability
Electromagnetic heating
Frequency
Gallium arsenide
Gunn devices
Light emitting diodes
Microwave devices
Microwave oscillators
Power generation
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The contradictions between the thermal parameters and microwave parasitic parameters in mm-wave Gunn diodes can be released by reasonable assumption for the thermal-conducting model of devices and practical analysis of microwave parasitic parameters. The corresponding formulas and curves are derived to carefully design the configuration parameters of the V-band device and its package.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1981.1129884