A Hybrid GaAs MIC Oscillator Using a Magnetostatic Wave Resonator

A Magnetostatic Surface Wave resonator and GaAs Field Effect transistor amplifier have been fabricated in an integrated format on a common MIC substrate operating at 3 GHz. The resultant oscillator had an output of -30 dB and phase noise of -92 dBc/Hz at 20 kHz offset.

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Bibliographic Details
Main Authors: Owens, J.M., Carter, R.L., Sam, Y.W.
Format: Conference Proceeding
Language:English
Subjects:
Etching
FETs
Gallium arsenide
Gold
Magnetostatic waves
Microwave integrated circuits
Microwave oscillators
Resonant frequency
Substrates
Transducers
Online Access:Request full text
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Description
Summary:A Magnetostatic Surface Wave resonator and GaAs Field Effect transistor amplifier have been fabricated in an integrated format on a common MIC substrate operating at 3 GHz. The resultant oscillator had an output of -30 dB and phase noise of -92 dBc/Hz at 20 kHz offset.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1983.1130899