V-Band Double-Drift Read Silicon IMPATTs

Double-drift hybrid Read silicon IMPATTs have been fabricated in the millimeter-wave frequency range with RF performance superior to that of more conventional double-drift flat diodes. State-of-the-art output power of 2.15 W was obtained at 60 GHz with 8.8 percent efficiency. The best DC-to-RF conve...

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Bibliographic Details
Main Authors: Ma, Y.E., Nakaji, E.M., Thrower, W.F.
Format: Conference Proceeding
Language:English
Subjects:
Capacitance measurement
Diodes
Electrical resistance measurement
Metallization
Millimeter wave technology
Power generation
Radio frequency
Silicon
Temperature
Thermal resistance
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Description
Summary:Double-drift hybrid Read silicon IMPATTs have been fabricated in the millimeter-wave frequency range with RF performance superior to that of more conventional double-drift flat diodes. State-of-the-art output power of 2.15 W was obtained at 60 GHz with 8.8 percent efficiency. The best DC-to-RF conversion efficiency achieved was 12 percent.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1984.1131726