A 1-Watt, 8-17 GHz FET Power Amplifier

Design and performance of a compact size 1-Watt, 8-17 GHz, 38 +- 3 dB gain FET amplifier for airborne ECM applications is described. The amplifier with a gain temperature compensation PIN diode stage and a bias regulator is packaged in 1.1 x 0.5 x 3.65 inches hermetically sealed housing.

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Bibliographic Details
Main Authors: Dao, T., Tsai, W.C., Healy, R., Liles, B.
Format: Conference Proceeding
Language:English
Subjects:
Circuits
Frequency
Gain
Hermetic seals
High power amplifiers
Microwave FETs
Power amplifiers
Power generation
Regulators
Temperature
Online Access:Request full text
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Description
Summary:Design and performance of a compact size 1-Watt, 8-17 GHz, 38 +- 3 dB gain FET amplifier for airborne ECM applications is described. The amplifier with a gain temperature compensation PIN diode stage and a bias regulator is packaged in 1.1 x 0.5 x 3.65 inches hermetically sealed housing.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1984.1131742