Full Characterization of GaAs Power MESFET and Accurate Load-Pull Contours Prediction

A novel large-signal model implemented on the nonlinear time-domain program CIRCEC leads to accurate prediction of all the GaAs MESFET characteristics, needed for the design of a power amplifier. The good agreement between measured and modeled load-pull contours validates the chosen trends.

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Bibliographic Details
Main Authors: Lajugie, M., Grossier, F., Silbermann, A., Bender, Y.
Format: Conference Proceeding
Language:English
Subjects:
Electric breakdown
Frequency measurement
Gain measurement
Gallium arsenide
Impedance measurement
MESFETs
Power amplifiers
Power measurement
Predictive models
Semiconductor process modeling
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Description
Summary:A novel large-signal model implemented on the nonlinear time-domain program CIRCEC leads to accurate prediction of all the GaAs MESFET characteristics, needed for the design of a power amplifier. The good agreement between measured and modeled load-pull contours validates the chosen trends.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1986.1132186