K/sub a/-Band Monolithic GaAs Power FET Amplifiers

GaAs power MMIC amplifiers with an optimized FET structure operating at K/sub a/-band have achieved a small-signal gain of 4.3 dB and an output power of 481 mW. These 1.7 x 0.9-mm MMICs include DC-blocking capacitors and bias networks. A cascaded four-stage amplifier has achieved a power gain of 18....

Full description

Saved in:
Bibliographic Details
Main Authors: Hung, H.-L.A., Ezzeddine, A., Holdeman, L.B., Phelleps, F.R., Allison, J.F., Cornfeld, A.B., Smith, T., Huang, H.C.
Format: Conference Proceeding
Language:English
Subjects:
Capacitors
FETs
Fingers
Gain
Gallium arsenide
Laboratories
Millimeter wave circuits
Millimeter wave technology
Power amplifiers
Power generation
Online Access:Request full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:GaAs power MMIC amplifiers with an optimized FET structure operating at K/sub a/-band have achieved a small-signal gain of 4.3 dB and an output power of 481 mW. These 1.7 x 0.9-mm MMICs include DC-blocking capacitors and bias networks. A cascaded four-stage amplifier has achieved a power gain of 18.9 dB and output power of 437 mW at 28 GHz. These results may represent the highest power/gain yet demonstrated from cascaded stages of MMICs with on-chip bias and DC blocking at K/sub a/-band.
ISSN:0149-645X
2576-7216
DOI:10.1109/MWSYM.1987.1132332