Carbon nanotube electronics

Presents experimental results on single-wall carbon nanotube field-effect transistors (CNFETs) operating at gate and drain voltages below 1V. Taking into account the extremely small diameter of the semiconducting tubes used as active components, electrical characteristics are comparable with state-o...

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Bibliographic Details
Published in:IEEE transactions on nanotechnology 2002-12, Vol.1 (4), p.184-189
Main Authors: Appenzeller, J., Knoch, J., Martel, R., Derycke, V., Wind, S.J., Avouris, P.
Format: Article
Language:English
Subjects:
Applied sciences
Brillouin scattering
Carbon nanotubes
Chemical elements
Electron tubes
Electronics
Exact sciences and technology
FETs
Molecular electronics, nanoelectronics
MOSFETs
Nanoelectronics
Schottky barriers
Semiconductivity
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Thermal conductivity
Transistors
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Description
Summary:Presents experimental results on single-wall carbon nanotube field-effect transistors (CNFETs) operating at gate and drain voltages below 1V. Taking into account the extremely small diameter of the semiconducting tubes used as active components, electrical characteristics are comparable with state-of-the-art metal oxide semiconductor field-effect transistors (MOSFETs). While output as well as subthreshold characteristics resemble those of conventional MOSFETs, we find that CNFET operation is actually controlled by Schottky barriers (SBs) in the source and drain region instead of by the nanotube itself. Due to the small size of the contact region between the electrode and the nanotube, these barriers can be extremely thin, enabling good performance of SB-CNFETs.
ISSN:1536-125X
1941-0085
DOI:10.1109/TNANO.2002.807390