Low phase noise SiGe HBT push-push oscillators for V-band operation

The application of the push-push principle to oscillator design allows the extension of the usable frequency range of transistors for signal generating applications. In this paper, we present several V-band SiGe HBT push-push oscillators using both microstrip transmission line resonators as well as...

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Bibliographic Details
Main Author: Olbrich, G.R.
Format: Conference Proceeding
Language:English
Subjects:
Dielectric substrates
Dielectric thin films
Distributed parameter circuits
Germanium silicon alloys
Heterojunction bipolar transistors
Oscillators
Phase noise
Power generation
Power transmission lines
Silicon germanium
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Summary:The application of the push-push principle to oscillator design allows the extension of the usable frequency range of transistors for signal generating applications. In this paper, we present several V-band SiGe HBT push-push oscillators using both microstrip transmission line resonators as well as dielectric resonators. The circuits are fabricated in thin film technology on alumina substrates. Measured data of the microstrip transmission line oscillators are an output power of -5.6 dBm and a single sideband phase noise of L/sub ssb/ (1 MHz) = -98 dBc/Hz as well as +1 dBm and -108 dBc/Hz, respectively. For the dielectric resonator oscillators a maximum output power of -8 dBm and an optimum phase noise of -112 dBc/Hz (-14 dBm output power) were measured.
DOI:10.1109/ICMMT.2002.1187639