A new thin-film CuGaSe/sub 2//Cu(In,Ga)Se/sub 2/ bifacial, tandem solar cell with both junctions formed simultaneously

Thin films of CuGaSe/sub 2/ and Cu(In,Ga)Se/sub 2/ were evaporated by the 3-stage process onto opposite sides of a single piece of soda-lime glass, coated bifacially with an n/sup +/-TCO. Junctions were formed simultaneously with each of the p-type absorbers by depositing thin films of n-CdS via che...

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Bibliographic Details
Main Authors: Young, D.L., Abushama, J., Noufi, R., Xiaonan Li, Keane, J., Gessert, T.A., Ward, J.S., Contreras, M., Symko-Davies, M., Coutts, T.J.
Format: Conference Proceeding
Language:English
Subjects:
Chemicals
Contacts
Glass
Photovoltaic cells
Prototypes
Scanning electron microscopy
Substrates
Temperature measurement
Transistors
Zinc oxide
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Summary:Thin films of CuGaSe/sub 2/ and Cu(In,Ga)Se/sub 2/ were evaporated by the 3-stage process onto opposite sides of a single piece of soda-lime glass, coated bifacially with an n/sup +/-TCO. Junctions were formed simultaneously with each of the p-type absorbers by depositing thin films of n-CdS via chemical bath deposition (CBD) at 60/spl deg/C. The resulting four-terminal device is a nonmechanically stacked, two-junction tandem. The unique growth sequence protects the temperature-sensitive p/n junctions. The initial device (/spl eta/ = 3.7%, V/sub oc/ = 1.1 V [AM1.5]) suffered from low quantum efficiencies. Initial results are also presented from experiments with variations in growth sequence and back reflectors.
ISSN:1060-8371
DOI:10.1109/PVSC.2002.1190638