Multi-wafer growth and processing of 0.6-eV InGaAs monolithic interconnected modules

Recent progress in the optical and electrical performance of monolithic interconnected modules (MIMs) has produced an interest in manufacturing large quantities of cells for evaluation. Information resulting from this evaluation is necessary to produce and optimize a TPV system, where a large number...

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Bibliographic Details
Main Authors: Murray, C., Newman, F., Murray, S., Hills, J., Aiken, D., Siergiej, R., Wernsman, B., Taylor, A.
Format: Conference Proceeding
Language:eng ; jpn
Subjects:
Applied sciences
Doping
Energy
Exact sciences and technology
Indium gallium arsenide
Manufacturing processes
Natural energy
Plasma applications
Plasma measurements
Plasma temperature
Process design
Production
Solar energy
Substrates
Temperature control
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Description
Summary:Recent progress in the optical and electrical performance of monolithic interconnected modules (MIMs) has produced an interest in manufacturing large quantities of cells for evaluation. Information resulting from this evaluation is necessary to produce and optimize a TPV system, where a large number of devices with a nominal performance must be available for insertion into series/parallel electrical networks. In this work over 130 wafers comprising three different device designs were grown, with representative wafers from each design processed in a pilot-line manufacturing environment. This paper describes the material growth, device design and processing, and electrical performance of these cells.
ISSN:1060-8371
DOI:10.1109/PVSC.2002.1190722