Zinc-diffused InAsSbP/InAs and Ge TPV cells

By means of LPE growth and Zn diffusion, TPV cells and mid-IR photodetectors based on p-InAsSbP/n-InAsSbP/n-InAs and p-InAs/n-InAs structures have been fabricated with the photosensitivity widened in the infrared range (2.5-3.4 /spl mu/m). Zinc - diffused p-n Ge-based TPV cells have been fabricated...

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Bibliographic Details
Main Authors: Khvostikov, V.P., Khostikov, O.A., Oliva, E.V., Rumyantsev, V.D., Shvarts, M.Z., Tabarov, T.S., Andreev, V.M.
Format: Conference Proceeding
Language:English
Subjects:
Epitaxial growth
Gallium arsenide
Infrared spectra
Mirrors
Optical reflection
P-n junctions
Photoconductivity
Photodetectors
Short circuit currents
Zinc
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Summary:By means of LPE growth and Zn diffusion, TPV cells and mid-IR photodetectors based on p-InAsSbP/n-InAsSbP/n-InAs and p-InAs/n-InAs structures have been fabricated with the photosensitivity widened in the infrared range (2.5-3.4 /spl mu/m). Zinc - diffused p-n Ge-based TPV cells have been fabricated with external quantum yield as high as 0.9-0.95 and high short circuit current of 31.6 mA/cm/sup 2/ under sunlight with cut-off at /spl lambda/< 900 nm AMO spectrum. The Ge-based TPV cells with back-surface mirror demonstrate reflection of 85% for the sub-bandgap photons. The Ge cells with GaAs window have been developed for PV and TPV applications with using the combination of liquid-phase epitaxy and Zn-diffusion processes. Efficiency of more than 5% has been measured in p-GaAs/p-Ge/n-Ge cells under cut-off (/spl lambda/
ISSN:1060-8371
DOI:10.1109/PVSC.2002.1190736